P-Channel MOSFET, 74 A, 55 V, 3-Pin D2PAK Infineon IRF4905SPBF

RS Stock No.:: 124-8993
Mfr. Part No.:: IRF4905SPBF
Brand:: Infineon

P-Channel MOSFET, 74 A, 55 V, 3-Pin D2PAK Infineon IRF4905SPBF

This image is representative of the product range

Available for back order.

Added

Price (ex. GST) Each (In a Tube of 50)

$3.906

(exc. GST)

$4.297

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$3.906	$195.30
250 +	$3.515	$175.75
*price indicative

RS Stock No.:: 124-8993
Mfr. Part No.:: IRF4905SPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	74 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	20 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	180 nC @ 10 V
Transistor Material	Si
Length	10.54mm
Maximum Operating Temperature	+175 °C
Width	8.81mm
Number of Elements per Chip	1
Height	4.69mm
Minimum Operating Temperature	-55 °C