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Infineon HEXFET P-Channel MOSFET, 2.4 A, 20 V, 6-Pin Micro6 IRLMS6702TRPBF

RS Stock No.:: 165-5821
Mfr. Part No.:: IRLMS6702TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 2.4 A, 20 V, 6-Pin Micro6 IRLMS6702TRPBF

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RS Stock No.:: 165-5821
Mfr. Part No.:: IRLMS6702TRPBF
Brand:: Infineon

Specifications

Technical data sheets

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Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	2.4 A
	Maximum Drain Source Voltage	20 V
	Series	HEXFET
	Package Type	Micro6
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	375 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	0.7V
	Minimum Gate Threshold Voltage	0.7V
	Maximum Power Dissipation	1.7 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Number of Elements per Chip	1
	Length	3mm
	Typical Gate Charge @ Vgs	5.8 nC @ 4.5 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	1.75mm
	Height	1.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 2.4 A
	Maximum Drain Source Voltage 20 V
	Series HEXFET
	Package Type Micro6
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 375 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 0.7V
	Minimum Gate Threshold Voltage 0.7V
	Maximum Power Dissipation 1.7 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Number of Elements per Chip 1
	Length 3mm
	Typical Gate Charge @ Vgs 5.8 nC @ 4.5 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 1.75mm
	Height 1.3mm
	Minimum Operating Temperature -55 °C