P-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC060P03NS3EGATMA1

RS Stock No.:: 165-6578
Mfr. Part No.:: BSC060P03NS3EGATMA1
Brand:: Infineon

P-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC060P03NS3EGATMA1

This image is representative of the product range

4880 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 5000)

$0.779

(exc. GST)

$0.857

(inc. GST)

Units	Per unit	Per Reel*
5000 - 20000	$0.779	$3,895.00
25000 +	$0.701	$3,505.00

*price indicative

RS Stock No.:: 165-6578
Mfr. Part No.:: BSC060P03NS3EGATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	30 V
Series	OptiMOS P
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	9.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.9V
Minimum Gate Threshold Voltage	3.1V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Length	6.35mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	61 nC @ 10 V
Number of Elements per Chip	1
Width	5.35mm
Height	1.1mm
Minimum Operating Temperature	-55 °C