P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1

RS Stock No.:: 825-9134
Mfr. Part No.:: BSZ086P03NS3EGATMA1
Brand:: Infineon

P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1

This image is representative of the product range

14140 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 20)

$1.50

(exc. GST)

$1.65

(inc. GST)

Units	Per unit	Per Pack*
20 - 1240	$1.50	$30.00
1260 +	$1.462	$29.24

*price indicative

RS Stock No.:: 825-9134
Mfr. Part No.:: BSZ086P03NS3EGATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Series	OptiMOS P
Package Type	TSDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	13.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.9V
Minimum Gate Threshold Voltage	3.1V
Maximum Power Dissipation	69 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	3.4mm
Typical Gate Charge @ Vgs	43.2 nC @ 10 V
Width	3.4mm
Height	1.1mm
Minimum Operating Temperature	-55 °C