Dual N-Channel MOSFET, 260 mA, 60 V, 8-Pin DFN1010B-6 Nexperia NX7002BKXBZ
- RS Stock No.:
- 153-1880
- Mfr. Part No.:
- NX7002BKXBZ
- Brand:
- Nexperia
On back order for despatch 22/08/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 50)
$0.446
(exc. GST)
$0.491
(inc. GST)
| Units | Per unit | Per Pack* |
| 50 - 1200 | $0.446 | $22.30 |
| 1250 - 2450 | $0.435 | $21.75 |
| 2500 + | $0.428 | $21.40 |
| *price indicative | ||
- RS Stock No.:
- 153-1880
- Mfr. Part No.:
- NX7002BKXBZ
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 260 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN1010B-6 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 5.7 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 4032 mW |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 2 |
| Width | 1.05mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 1 nC @ 10 V |
| Length | 1.15mm |
| Minimum Operating Temperature | -55 °C |
| Height | 0.36mm |
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