N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3 Nexperia PMXB43UNEZ
- RS Stock No.:
- 153-0741
- Mfr. Part No.:
- PMXB43UNEZ
- Brand:
- Nexperia
On back order for despatch 19/10/2024, delivery within 10 working days from despatch date.
Price (ex. GST) Each (On a Reel of 5000)
$0.167
(exc. GST)
$0.184
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | $0.167 | $835.00 |
| 10000 - 15000 | $0.163 | $815.00 |
| 20000 + | $0.161 | $805.00 |
*price indicative
- RS Stock No.:
- 153-0741
- Mfr. Part No.:
- PMXB43UNEZ
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 42 mΩ
1 kV ESD protected
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 42 mΩ
1 kV ESD protected
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | DFN1010D-3 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 120 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.9V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 8.33 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 8 V |
| Typical Gate Charge @ Vgs | 5.7 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 1.15mm |
| Width | 1.05mm |
| Maximum Operating Temperature | +150 °C |
| Height | 0.36mm |
| Minimum Operating Temperature | -55 °C |
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