N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT-227 IXYS IXFN110N85X
- RS Stock No.:
- 146-4396
- Mfr. Part No.:
- IXFN110N85X
- Brand:
- IXYS
2 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each
$98.29
(exc. GST)
$108.12
(inc. GST)
Units | Per unit |
|---|---|
| 1 - 2 | $98.29 |
| 3 - 4 | $96.76 |
| 5 + | $94.37 |
- RS Stock No.:
- 146-4396
- Mfr. Part No.:
- IXFN110N85X
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 850 V |
| Package Type | SOT-227 |
| Series | HiperFET |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1.17 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Width | 25.07mm |
| Length | 38.23mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 425 @ 10 V nC |
| Forward Diode Voltage | 1.4V |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |
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