Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Units	Per unit	Per Reel**
3000 - 3000	$0.116	$348.00
6000 - 9000	$0.113	$339.00
12000 +	$0.112	$336.00

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	210 mA
	Maximum Drain Source Voltage	50 V
	Package Type	SOT-323
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	6 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.8V
	Maximum Power Dissipation	340 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	1.25mm
	Typical Gate Charge @ Vgs	1.1 nC @ 10 V
	Length	2mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Height	0.9mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.4V

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 210 mA
	Maximum Drain Source Voltage 50 V
	Package Type SOT-323
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 6 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.8V
	Maximum Power Dissipation 340 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 1.25mm
	Typical Gate Charge @ Vgs 1.1 nC @ 10 V
	Length 2mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Height 0.9mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.4V

N-Channel MOSFET, 210 mA, 50 V, 3-Pin SOT-323 onsemi BSS138W

FREE delivery for orders over $80.00 ex GST

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

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