N-Channel MOSFET, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BSS316NH6327XTSA1

RS Stock No.:: 145-8833
Mfr. Part No.:: BSS316NH6327XTSA1
Brand:: Infineon

N-Channel MOSFET, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BSS316NH6327XTSA1

This image is representative of the product range

7750 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$0.108

(exc. GST)

$0.119

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	$0.108	$324.00
15000 +	$0.097	$291.00

*price indicative

RS Stock No.:: 145-8833
Mfr. Part No.:: BSS316NH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.4 A
Maximum Drain Source Voltage	30 V
Series	OptiMOS™ 2
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	1.3mm
Length	2.9mm
Typical Gate Charge @ Vgs	0.6 nC @ 5 V
Transistor Material	Si
Height	0.9mm
Minimum Operating Temperature	-55 °C