ROHM RSD150N06 N-Channel MOSFET, 15 A, 60 V, 3-Pin SOT-428 RSD150N06TL
- RS Stock No.:
- 133-2838
- Mfr. Part No.:
- RSD150N06TL
- Brand:
- ROHM
Bulk discount available
Subtotal (1 pack of 10 units)**
$16.96
(exc. GST)
$18.66
(inc. GST)
1290 In Global stock for delivery within 5 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $60.00 ex GST
Real time qty checker
Units | Per unit | Per Pack** |
---|---|---|
10 - 40 | $1.696 | $16.96 |
50 - 90 | $1.646 | $16.46 |
100 - 490 | $1.598 | $15.98 |
500 - 990 | $1.55 | $15.50 |
1000 + | $1.504 | $15.04 |
**price indicative
- RS Stock No.:
- 133-2838
- Mfr. Part No.:
- RSD150N06TL
- Brand:
- ROHM
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | ROHM | |
Channel Type | N | |
Maximum Continuous Drain Current | 15 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-428 | |
Series | RSD150N06 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 51 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 20 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 5.5mm | |
Length | 6.5mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.2V | |
Height | 2.3mm | |
Select all | ||
---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-428 | ||
Series RSD150N06 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 51 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.5mm | ||
Length 6.5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Height 2.3mm | ||
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