ROHM RSD201N10 N-Channel MOSFET, 20 A, 100 V, 3-Pin SOT-428 RSD201N10TL
- RS Stock No.:
- 133-2839
- Mfr. Part No.:
- RSD201N10TL
- Brand:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$10.88
(exc. GST)
$11.97
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 310 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | $2.176 | $10.88 |
| 25 - 45 | $2.138 | $10.69 |
| 50 - 245 | $2.102 | $10.51 |
| 250 - 495 | $2.064 | $10.32 |
| 500 + | $2.028 | $10.14 |
*price indicative
- RS Stock No.:
- 133-2839
- Mfr. Part No.:
- RSD201N10TL
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | RSD201N10 | |
| Package Type | SOT-428 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 84 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 20 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.8mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V | |
| Length | 6.7mm | |
| Height | 2.5mm | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 100 V | ||
Series RSD201N10 | ||
Package Type SOT-428 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 84 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.8mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 55 nC @ 10 V | ||
Length 6.7mm | ||
Height 2.5mm | ||
Forward Diode Voltage 1.5V | ||
- COO (Country of Origin):
- JP
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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