N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXYS IXFN360N15T2
- RS Stock No.:
- 125-8042
- Mfr. Part No.:
- IXFN360N15T2
- Brand:
- IXYS
On back order for despatch 01/05/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each
$78.37
(exc. GST)
$86.21
(inc. GST)
| Units | Per unit |
| 1 - 2 | $78.37 |
| 3 - 4 | $76.87 |
| 5 + | $75.23 |
- RS Stock No.:
- 125-8042
- Mfr. Part No.:
- IXFN360N15T2
- Brand:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 310 A |
| Maximum Drain Source Voltage | 150 V |
| Series | GigaMOS TrenchT2 HiperFET |
| Package Type | SOT-227 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 1.07 kW |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 715 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Width | 25.07mm |
| Length | 38.23mm |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |