Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

RS Stock No.:: 121-6306
Mfr. Part No.:: NTLJD3119CTBG
Brand:: onsemi

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

This image is representative of the product range

On back order for despatch 14/12/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 3000)

$0.50

(exc. GST)

$0.55

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.50	$1,500.00
6000 - 9000	$0.496	$1,488.00
12000 +	$0.484	$1,452.00

*price indicative

RS Stock No.:: 121-6306
Mfr. Part No.:: NTLJD3119CTBG
Brand:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.1 A, 4.6 A
Maximum Drain Source Voltage	20 V
Package Type	WDFN
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	120 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.3 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	2mm
Length	2mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	0.75mm

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

Dual N/P-Channel MOSFET, ON Semiconductor

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