Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP

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$1,011.00

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$1,113.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$0.337$1,011.00
6000 - 9000$0.331$993.00
12000 +$0.323$969.00

*price indicative

RS Stock No.:
214-4334
Mfr. Part No.:
BSL308CH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET Arrays

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

30V

Package Type

TSOP

Series

OptiMOS

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

57mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.6W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

-5nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

2.9mm

Standards/Approvals

IEC61249-2-21, RoHS

Width

1.6 mm

Height

1mm

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

This Infineon OptimOS P3 + OptiMOS 2 MOSFET- an n-channel and a p-channel power MOSFET within the same package-is high efficiency solution for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). It is Avalanche rated

It is 100% lead-free and RoHS compliant

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