Vishay SISS52DN N channel-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3
- RS Stock No.:
- 736-353
- Mfr. Part No.:
- SISS52DN-T1-BE3
- Brand:
- Vishay
N
Bulk discount available
Subtotal (1 tape of 1 unit)*
$2.37
(exc. GST)
$2.61
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 09 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | $2.37 |
| 10 - 24 | $1.54 |
| 25 - 99 | $0.81 |
| 100 + | $0.78 |
*price indicative
- RS Stock No.:
- 736-353
- Mfr. Part No.:
- SISS52DN-T1-BE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SISS52DN | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00095Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8S | ||
Series SISS52DN | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00095Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for robust switching applications, offering excellent efficiency and reliability in power management solutions.
Tested for 100% R g and UIS, ensuring superior reliability
Material compliance categorisation enhances environmental safety
Related links
- Vishay SISS Type N-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3
- Vishay SiSS52DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS52DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3
- Vishay SISS30DN N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS30DN-T1-BE3
- Vishay SISS64DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3
- Vishay SISS26DN N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3
- Vishay TrenchFET N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3