Vishay SIEH3812EW N channel-Channel MOSFET, 322 A, 80 V Enhancement, 8-Pin PowerPAK 8 x 8 SIEH3812EW-T1-GE3

N
Bulk discount available

Subtotal (1 tape of 1 unit)*

$13.81

(exc. GST)

$15.19

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Tape(s)
Per Tape
1 - 9$13.81
10 - 49$8.55
50 - 99$6.63
100 +$4.48

*price indicative

RS Stock No.:
736-346
Mfr. Part No.:
SIEH3812EW-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

322A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 8 x 8

Series

SIEH3812EW

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00175Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

417W

Typical Gate Charge Qg @ Vgs

154nC

Maximum Operating Temperature

175°C

Width

8mm

Length

8mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay Power MOSFET delivers exceptional performance in high-efficiency applications, featuring an N-Channel design that supports significant continuous drain current, Ideal for Advanced energy management solutions.

Fully lead (Pb)-free and halogen-free construction for environmental compliance

Tested at 100% for R and UIS to guarantee reliability

Related links