Vishay EF Type N-Channel MOSFET, 23 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8

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Subtotal (1 pack of 5 units)*

$53.61

(exc. GST)

$58.97

(inc. GST)

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Units
Per unit
Per Pack*
5 - 745$10.722$53.61
750 - 1495$10.456$52.28
1500 +$10.294$51.47

*price indicative

RS Stock No.:
200-6810
Mfr. Part No.:
SIHH125N60EF-T1GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 8 x 8

Series

EF

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

156W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

47nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

1.05 mm

Length

8.1mm

Height

8.1mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHH125N60EF-T1GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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