Vishay SI2324BDS N channel-Channel MOSFET, 1.9 A, 100 V Enhancement, 3-Pin SOT-23 SI2324BDS-T1-GE3

N
Bulk discount available
View bulk pricing options

Subtotal (1 tape of 1 unit)*

$0.54

(exc. GST)

$0.59

(inc. GST)

Add to Basket
Select or type quantity

Temporarily out of stock
  • Shipping from 11 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
RS Stock No.:
736-344
Mfr. Part No.:
SI2324BDS-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-23 (TO-236AB)

Series

SI2324BDS

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.21Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

1.7W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

1.86nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed to optimise power management applications, featuring a robust 100V drain-source voltage rating and enhanced thermal characteristics for efficient operation.

The high thermal resistance performance enhances reliability

Designed for LED backlighting and DC/DC converter applications

Related links