Infineon IPF Type N-Channel Power Transistor, 87 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF129N20NM6ATMA1
- RS Stock No.:
- 349-408
- Mfr. Part No.:
- IPF129N20NM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
$22.42
(exc. GST)
$24.66
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | $11.21 | $22.42 |
| 20 - 198 | $10.09 | $20.18 |
| 200 - 998 | $9.315 | $18.63 |
| 1000 - 1998 | $8.63 | $17.26 |
| 2000 + | $7.74 | $15.48 |
*price indicative
- RS Stock No.:
- 349-408
- Mfr. Part No.:
- IPF129N20NM6ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TO263-7 | |
| Series | IPF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 12.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 234W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC for Industrial Applications, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TO263-7 | ||
Series IPF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 12.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 234W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC for Industrial Applications, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Related links
- Infineon IPF N-Channel MOSFET 120 V, 7-Pin PG-TO263-7 IPF019N12NM6ATMA1
- Infineon IPF N-Channel MOSFET 135 V, 7-Pin PG-TO263-7 IPF031N13NM6ATMA1
- Infineon IPF N-Channel MOSFET 135 V, 7-Pin PG-TO263-7 IPF021N13NM6ATMA1
- Infineon IPF N-Channel MOSFET 200 V, 7-Pin PG-TO263-7 IPF067N20NM6ATMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R022M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 650 V, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1