Infineon IPT Type N-Channel Power Transistor, 331 A, 120 V Enhancement, 8-Pin PG-HSOG-8 IPTG017N12NM6ATMA1
- RS Stock No.:
- 349-135
- Mfr. Part No.:
- IPTG017N12NM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
$24.18
(exc. GST)
$26.60
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 1,800 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | $12.09 | $24.18 |
| 20 - 198 | $10.89 | $21.78 |
| 200 + | $10.04 | $20.08 |
*price indicative
- RS Stock No.:
- 349-135
- Mfr. Part No.:
- IPTG017N12NM6ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 331A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | IPT | |
| Package Type | PG-HSOG-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 395W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, MSL1 J-STD-020, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 331A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series IPT | ||
Package Type PG-HSOG-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 395W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, MSL1 J-STD-020, IEC61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring minimal conduction losses for improved performance. With an excellent gate charge x RDS(on) product (FOM), it enables superior switching characteristics. The MOSFET also has very low reverse recovery charge (Qrr), contributing to reduced switching losses. Its high avalanche energy rating ensures robustness under stress, and it operates reliably at a 175°C temperature, making it suitable for demanding and high temperature environments.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Related links
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R180CM8XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60T040S7XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- Infineon IPT N-Channel MOSFET 200 V, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1
- Infineon IPT N-Channel MOSFET 135 V, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1