Infineon IPT N-Channel Power Transistor, 297 A, 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1
- RS Stock No.:
- 349-120
- Mfr. Part No.:
- IPT020N13NM6ATMA1
- Brand:
- Infineon
Get a bulk buy discount
Add 20 more to save $33.80
View bulk pricing optionsSubtotal (1 pack of 2 units)*
$34.14
(exc. GST)
$37.56
(inc. GST)
FREE delivery for orders over $80.00 ex GST
In Stock
- 1,994 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 18 | $17.07 | $34.14 | - |
| 20 - 198 | $15.38 | $30.76 | $33.80 |
| 200 - 998 | $14.165 | $28.33 | $581.00 |
| 1000 - 1998 | $13.165 | $26.33 | $3,905.00 |
| 2000 + | $11.795 | $23.59 | $10,550.00 |
*price indicative
- RS Stock No.:
- 349-120
- Mfr. Part No.:
- IPT020N13NM6ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 297A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 39W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 297A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 39W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for efficient power switching applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and improving overall performance. With an excellent gate charge x RDS(on) product (FOM), it ensures superior switching efficiency. The MOSFET also features very low reverse recovery charge (Qrr) for better efficiency during switching events.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Related links
- Infineon IPT Type N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG020N13NM6ATMA1
- Infineon IPT Type N-Channel Power Transistor 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1
- Infineon IPT Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1
- Infineon IPT Type N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- Infineon IPT Type N-Channel Power MOSFET 0.82 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- Infineon IPT Type N-Channel Power MOSFET 0.82 V Enhancement, 8-Pin PG-HSOF-8 IPT60R022S7XTMA1