Vishay Single IRLD 1 N-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin HVMDIP IRLD110PBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
301-338
Mfr. Part No.:
IRLD110PBF
Brand:
Vishay
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Brand

Vishay

Transistor Configuration

Single

Series

IRLD

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

1 A

Maximum Drain Source Voltage (Vds)

100 V

Channel Mode

Enhancement

Pin Count

4

Package Type

HVMDIP

Automotive Standard

No

Forward Voltage (Vf)

2.5 V

Height

3.37 mm

Length

5 mm

Maximum Drain Source Resistance (Rds)

540 mΩ

Maximum Gate Source Voltage (Vgs)

-10 V, +10 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

1.3 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole, Through Hole

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

6.1 nC

Width

6.29 mm

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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