Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF

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Packaging Options:
RS Stock No.:
301-338
Mfr. Part No.:
IRLD110PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Width

6.29mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Height

3.37mm

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


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MOSFET Transistors, Vishay Semiconductor

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