IXYS HiperFET, Polar N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P
- RS Stock No.:
- 194-063
- Mfr. Part No.:
- IXFH14N60P
- Brand:
- IXYS
This image is representative of the product range
Stock information currently inaccessible
- RS Stock No.:
- 194-063
- Mfr. Part No.:
- IXFH14N60P
- Brand:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Series | HiperFET, Polar | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 550 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Width | 5.3mm | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 16.26mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.46mm | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Series HiperFET, Polar | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 550 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Width 5.3mm | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 16.26mm | ||
Minimum Operating Temperature -55 °C | ||
Height 21.46mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS