onsemi, Single Type N-Channel N-Channel Switch-Channel JFET 2 mA, 3-Pin SOT-23
- RS Stock No.:
- 166-1831
- Mfr. Part No.:
- MMBFJ113
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
$369.00
(exc. GST)
$405.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 11 August 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | $0.123 | $369.00 |
| 15000 + | $0.111 | $333.00 |
*price indicative
- RS Stock No.:
- 166-1831
- Mfr. Part No.:
- MMBFJ113
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | JFET | |
| Channel Type | Type N | |
| Sub Type | N-Channel Switch | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Drain Source Current Ids | 2 mA | |
| Pin Count | 3 | |
| Maximum Gate Source Voltage Vgs | -35 V | |
| Maximum Drain Source Resistance Rds | 100Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type JFET | ||
Channel Type Type N | ||
Sub Type N-Channel Switch | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Drain Source Current Ids 2 mA | ||
Pin Count 3 | ||
Maximum Gate Source Voltage Vgs -35 V | ||
Maximum Drain Source Resistance Rds 100Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Automotive Standard No | ||
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.