JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 806-1753
Mfr. Part No.J111
$0.418
Each (In a Pack of 50)
units
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-2910
Mfr. Part No.J111
$0.128
Each (In a Bag of 10000)
units
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 145-5347
Mfr. Part No.J113
$0.154
Each (In a Bag of 1000)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1766
Mfr. Part No.J113
$0.457
Each (In a Pack of 50)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1757
Mfr. Part No.J112
$0.492
Each (In a Pack of 50)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 124-1385
Mfr. Part No.J112
$0.166
Each (In a Bag of 1000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-1840
Mfr. Part No.MMBFJ201
$0.157
Each (On a Reel of 3000)
units
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 761-3688
Mfr. Part No.MMBFJ201
$0.436
Each (In a Pack of 25)
units
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 166-2021
Mfr. Part No.J109
$0.245
Each (In a Bag of 1000)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 806-1750
Mfr. Part No.J109
$0.528
Each (In a Pack of 25)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 145-5553
Mfr. Part No.MMBFJ112
$0.157
Each (On a Reel of 3000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 761-3684
Mfr. Part No.MMBFJ112
$0.486
Each (In a Pack of 25)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 806-4282
Mfr. Part No.MMBF5103
$0.418
Each (In a Pack of 50)
units
N 10 → 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 166-3085
Mfr. Part No.MMBF5103
$0.145
Each (On a Reel of 3000)
units
N 10 → 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 146-2080
Mfr. Part No.MMBF5459
$0.128
Each (On a Reel of 3000)
units
N 4 → 16mA - -25 V 25V Single Single - Surface Mount SOT-23 3 3pF 7pF 2.92 x 1.3 x 0.93mm
RS Stock No. 760-6034
Mfr. Part No.MMBF5459
$0.476
Each (In a Pack of 50)
units
N 4 → 16mA - -25 V 25V Single Single - Surface Mount SOT-23 3 3pF 7pF 2.92 x 1.3 x 0.93mm
RS Stock No. 756-0350
Mfr. Part No.2SK3320-BL(TE85L,F
BrandToshiba
$1.25
Each (In a Pack of 5)
units
N 6 → 14mA 50 V -1.5 V -50V Dual Common Source - Surface Mount USV 5 13pF - 2 x 1.25 x 0.9mm
RS Stock No. 864-7846
Mfr. Part No.MMBF4393LT1G
$0.452
Each (In a Pack of 50)
units
N 5 → 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14 pF @ 0 V 14 pF @ -15 V 3.04 x 1.4 x 1.01mm
RS Stock No. 145-4270
Mfr. Part No.MMBF4393LT1G
$0.157
Each (On a Reel of 3000)
units
N 5 → 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14 pF @ 0 V 14 pF @ -15 V 3.04 x 1.4 x 1.01mm
RS Stock No. 760-3126
Mfr. Part No.2SK209-Y(TE85L,F)
BrandToshiba
$0.624
Each (In a Pack of 10)
units
N 1.2 → 3.0mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
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