STMicroelectronics STGF10NB60SD, Type N-Channel IGBT, 29 A 600 V, 3-Pin TO-220FP, Through Hole

This image is representative of the product range

Subtotal (1 pack of 10 units)*

$22.14

(exc. GST)

$24.35

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 20 unit(s) ready to ship from another location
  • Plus 50 unit(s) shipping from 13 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +$2.214$22.14

*price indicative

Packaging Options:
RS Stock No.:
877-2873
Mfr. Part No.:
STGF10NB60SD
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

29A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

80W

Package Type

TO-220FP

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

3.8μs

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.75V

Maximum Operating Temperature

150°C

Series

Low Drop

Standards/Approvals

RoHS

Length

30.6mm

Height

10.4mm

Width

4.6 mm

Energy Rating

8mJ

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links