STMicroelectronics STGF10NB60SD IGBT, 23 A 600 V, 3-Pin TO-220FP, Through Hole
- RS Stock No.:
- 168-8877
- Mfr. Part No.:
- STGF10NB60SD
- Brand:
- STMicroelectronics
On back order for despatch 27/11/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 50)
$3.366
(exc. GST)
$3.703
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 200 | $3.366 | $168.30 |
| 250 + | $3.03 | $151.50 |
| *price indicative | ||
- RS Stock No.:
- 168-8877
- Mfr. Part No.:
- STGF10NB60SD
- Brand:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 23 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 25 W |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 20mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Energy Rating | 8mJ |
| Gate Capacitance | 610pF |