MPN

onsemi, N-Channel IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

RS Stock No.:: 739-4945P
Mfr. Part No.:: FGH60N60SMD
Brand:: onsemi

onsemi, N-Channel IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

This image is representative of the product range

Get a bulk buy discount

Add 40 more to save 17%

View bulk pricing options

Subtotal 8 units (supplied in a tube)*

$104.16

(exc. GST)

$114.56

(inc. GST)

FREE delivery for orders over $80.00 ex GST

In Stock

69 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Saving
8 - 39	$13.02	-
40 +	$10.71	17%

*price indicative

RS Stock No.:: 739-4945P
Mfr. Part No.:: FGH60N60SMD
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current Ic	120A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	600W
	Package Type	TO-247AB
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.9V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Series	Field Stop 2nd generation
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Select all
	Brand onsemi
	Maximum Continuous Collector Current Ic 120A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 600W
	Package Type TO-247AB
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.9V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Series Field Stop 2nd generation
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.