STMicroelectronics STGWA80H65DFBAG IGBT, 80 A 650 V, 3-Pin TO-247

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$10.35

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$11.38

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1 - 4$10.35
5 - 9$9.84
10 - 14$9.35
15 - 19$8.87
20 +$8.43

*price indicative

Packaging Options:
RS Stock No.:
261-5072
Mfr. Part No.:
STGWA80H65DFBAG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

535W

Package Type

TO-247

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

15V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

5mm

Length

15.8mm

Width

21 mm

Series

STGWA

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

AEC-Q101 qualified

High-speed switching series

Maximum junction temperature TJ is 175 degree C

Minimized tail current

Tight parameter distribution

Positive temperature VCE(sat) coefficient

Soft and very fast recovery antiparallel diode

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