Infineon IMBG120R350M1HXTMA1 IGBT Module, 4.7 A TO-263

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

$8.25

(exc. GST)

$9.08

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 654 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9$8.25
10 - 99$7.46
100 - 249$6.97
250 - 499$6.18
500 +$5.78

*price indicative

Packaging Options:
RS Stock No.:
258-3757
Mfr. Part No.:
IMBG120R350M1HXTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current Ic

4.7A

Product Type

IGBT Module

Maximum Power Dissipation Pd

65W

Package Type

TO-263

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Very low switching losses

Short-circuit withstand time, 3 μs

Fully controllable dV/dt

Efficiency improvement

Enabling higher frequency

Increased power density

Related links