onsemi NXH40B120MNQ0SNG IGBT Module Q0PACK - Case 180AJ, Surface

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Subtotal (1 unit)*

$142.85

(exc. GST)

$157.14

(inc. GST)

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Units
Per unit
1 - 1$142.85
2 - 3$140.70
4 - 7$138.58
8 - 11$136.52
12 +$134.48

*price indicative

Packaging Options:
RS Stock No.:
245-6982
Mfr. Part No.:
NXH40B120MNQ0SNG
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Number of Transistors

2

Maximum Power Dissipation Pd

118W

Package Type

Q0PACK - Case 180AJ

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

NXH40B120MNQ0SNG

Standards/Approvals

RoHS

Height

13.9mm

Length

55.2mm

Automotive Standard

No

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC


The ON Semiconductor 3 Channel Boost Q1 Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 40 m SiC MOSFETs

Low Reverse Recovery and Fast Switching SiC Diodes

1200 V Bypass and Anti parallel Diodes

Low Inductive Layout Solderable Pins Thermistor

This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant

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