Infineon FP75R12KT4BOSA1 IGBT Module 1200 V EconoPIM

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$149.29

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$164.22

(inc. GST)

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1 - 1$149.29
2 - 2$146.30
3 - 3$143.37
4 - 4$140.51
5 +$137.70

*price indicative

Packaging Options:
RS Stock No.:
244-5854
Mfr. Part No.:
FP75R12KT4BOSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

385W

Package Type

EconoPIM

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

17mm

Standards/Approvals

RoHS

Width

62.5 mm

Series

FP75R12KT4B

Length

122mm

Automotive Standard

No

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 355 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)

Gate-emitter peak voltage + /- 20 V

Collector-emitter saturation voltage 2.15 V

Gate-emitter leakage current 400 nA

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