Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

$75.15

(exc. GST)

$82.66

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 11 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1$75.15
2 - 2$73.64
3 - 3$72.17
4 - 4$70.71
5 +$69.32

*price indicative

Packaging Options:
RS Stock No.:
244-5391
Mfr. Part No.:
FP25R12W2T4B11BOMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

39 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Number of Transistors

7

Maximum Power Dissipation

175 W

The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links