Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

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Subtotal (1 tray of 10 units)*

$2,895.90

(exc. GST)

$3,185.50

(inc. GST)

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  • Shipping from 21 January 2027
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Units
Per unit
Per Tray*
10 - 10$289.59$2,895.90
20 - 20$283.798$2,837.98
30 +$278.123$2,781.23

*price indicative

RS Stock No.:
244-5379
Mfr. Part No.:
FP100R12KT4BOSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

515 W

Number of Transistors

7

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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