Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V
- RS Stock No.:
- 244-5407
- Mfr. Part No.:
- FS150R12KT4B11BOSA1
- Brand:
- Infineon
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Subtotal (1 tray of 10 units)*
$1,699.29
(exc. GST)
$1,869.22
(inc. GST)
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- 10 unit(s) shipping from 16 March 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 10 - 10 | $169.929 | $1,699.29 |
| 20 - 20 | $166.531 | $1,665.31 |
| 30 + | $163.20 | $1,632.00 |
*price indicative
- RS Stock No.:
- 244-5407
- Mfr. Part No.:
- FS150R12KT4B11BOSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation | 750 W | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 750 W | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.10 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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