Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

$131.70

(exc. GST)

$144.90

(inc. GST)

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  • 180 unit(s) ready to ship from another location
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Units
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Per Tube*
30 - 120$4.39$131.70
150 +$3.952$118.56

*price indicative

RS Stock No.:
226-6116
Mfr. Part No.:
IKW50N65EH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

275W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

30 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Width

16.13 mm

Length

41.42mm

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.

Factor 2.5 lower Qg

Factor 2 reduction in switching losses

200mV reduction in VCEsat

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