Infineon, Type N-Channel Reverse Conducting IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6645
- Mfr. Part No.:
- IHW50N65R5XKSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
$137.64
(exc. GST)
$151.41
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | $4.588 | $137.64 |
| 90 - 120 | $4.46 | $133.80 |
| 150 + | $4.324 | $129.72 |
*price indicative
- RS Stock No.:
- 215-6645
- Mfr. Part No.:
- IHW50N65R5XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Reverse Conducting IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 282W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Standards/Approvals | Pb-free lead plating, RoHS, JESD-022 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Reverse Conducting IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 282W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Standards/Approvals Pb-free lead plating, RoHS, JESD-022 | ||
Automotive Standard No | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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