Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 5 units)*

$22.83

(exc. GST)

$25.115

(inc. GST)

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  • 920 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 5$4.566$22.83
10 - 95$4.484$22.42
100 - 245$4.402$22.01
250 - 495$4.322$21.61
500 +$4.24$21.20

*price indicative

Packaging Options:
RS Stock No.:
215-6648
Mfr. Part No.:
IKB15N65EH5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

105 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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