Infineon IKB15N65EH5ATMA1, Type N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface

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Subtotal (1 pack of 5 units)*

$22.83

(exc. GST)

$25.115

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5$4.566$22.83
10 - 95$4.484$22.42
100 - 245$4.402$22.01
250 - 495$4.322$21.61
500 +$4.24$21.20

*price indicative

Packaging Options:
RS Stock No.:
215-6648
Mfr. Part No.:
IKB15N65EH5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT Single Transistor IC

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

105W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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