- RS Stock No.:
- 215-6635
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Brand:
- Infineon
Available for back order.
Price (ex. GST) Each (In a Tube of 30)
$4.52
(exc. GST)
$4.97
(inc. GST)
Units | Per unit | Per Tube* |
---|---|---|
30 - 60 | $4.52 | $135.60 |
90 - 120 | $4.393 | $131.79 |
150 + | $4.261 | $127.83 |
*price indicative
- RS Stock No.:
- 215-6635
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 1350 V |
Maximum Gate Emitter Voltage | ±20 V, ±25 V |
Maximum Power Dissipation | 310 W |
Package Type | PG-TO247-3 |
Pin Count | 3 |
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