STMicroelectronics STGW100H65FB2-4, Type N-Channel IGBT, 145 A 650 V, 4-Pin TO-247-4, Through Hole

This image is representative of the product range

View all IGBTs

Subtotal (1 pack of 2 units)*

$27.32

(exc. GST)

$30.06

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 568 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 +$13.66$27.32

*price indicative

Packaging Options:
RS Stock No.:
212-2107
Mfr. Part No.:
STGW100H65FB2-4
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

145A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

441W

Package Type

TO-247-4

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Series

STG

Standards/Approvals

RoHS

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Automotive Standard

No

IGBT


The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

Related links