STMicroelectronics STGF20H65DFB2, N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole
- RS Stock No.:
- 204-9871
- Mfr. Part No.:
- STGF20H65DFB2
- Brand:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 204-9871
- Mfr. Part No.:
- STGF20H65DFB2
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 45W | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | STG | |
| Width | 16.4mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 45W | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series STG | ||
Width 16.4mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Related links
- STMicroelectronics STGF20H65DFB2 40 A 650 V Through Hole
- STMicroelectronics 40 A 650 V Through Hole
- STMicroelectronics 7 A 600 V Through Hole
- STMicroelectronics 29 A 600 V Through Hole
- STMicroelectronics 40 A 650 V Through Hole
- STMicroelectronics STGWA40IH65DF 40 A 650 V Through Hole
- STMicroelectronics STGWA40H65DFB2 40 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA20HP65FB2 40 A 650 V, 3-Pin TO-247