STMicroelectronics, Type N-Channel IGBT, 86 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

$95.25

(exc. GST)

$104.76

(inc. GST)

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Units
Per unit
Per Tube*
30 - 30$3.175$95.25
60 - 90$3.096$92.88
120 +$3.048$91.44

*price indicative

RS Stock No.:
204-3943
Mfr. Part No.:
STGWA50HP65FB2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

86A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

272W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

15.9mm

Width

21.1 mm

Height

5.1mm

Series

STG

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C

Co-packaged protection diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive temperature coefficient

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