- RS Stock No.:
- 178-4594
- Mfr. Part No.:
- FGH40T120SQDNL4
- Brand:
- onsemi
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Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each
$13.23
(exc. GST)
$14.55
(inc. GST)
Units | Per unit |
1 - 7 | $13.23 |
8 - 14 | $12.91 |
15 + | $12.70 |
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 178-4594
- Mfr. Part No.:
- FGH40T120SQDNL4
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices
Applications
Solar inverter UPS Welding
Applications
Solar inverter UPS Welding
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 160 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±30V |
Number of Transistors | 1 |
Maximum Power Dissipation | 454 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | P |
Pin Count | 4 |
Transistor Configuration | Single |
Dimensions | 15.8 x 5.2 x 22.74mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 5000pF |