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onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.:: 181-1866
Mfr. Part No.:: FGH75T65SHDTL4
Brand:: onsemi

onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 450 units)*

$2,428.65

(exc. GST)

$2,671.65

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Tube*
450 - 450	$5.397	$2,428.65
900 - 1350	$5.262	$2,367.90
1800 +	$5.181	$2,331.45

*price indicative

RS Stock No.:: 181-1866
Mfr. Part No.:: FGH75T65SHDTL4
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current Ic	75A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	455W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type P
	Pin Count	4
	Switching Speed	1MHz
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.6V
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	Field Stop 3rd generation
	Automotive Standard	No
	Energy Rating	160mJ

	Select all
	Brand onsemi
	Maximum Continuous Collector Current Ic 75A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 455W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type P
	Pin Count 4
	Switching Speed 1MHz
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series Field Stop 3rd generation
	Automotive Standard No
	Energy Rating 160mJ

Datasheet

COO (Country of Origin):: CN

Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C

Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A

100% of the Parts Tested for ILM(1)

High Input Impedance

Fast Switching

Tighten Parameter Distribution

onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

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