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IXYS, Type N-Channel IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB

RS Stock No.:: 168-4565
Mfr. Part No.:: MIXA225PF1200TSF
Brand:: IXYS

IXYS, Type N-Channel IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB

This image is representative of the product range

Bulk discount available

Subtotal (1 box of 3 units)*

$652.26

(exc. GST)

$717.48

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Box*
3 - 3	$217.42	$652.26
6 - 9	$211.983	$635.95
12 +	$208.723	$626.17

*price indicative

RS Stock No.:: 168-4565
Mfr. Part No.:: MIXA225PF1200TSF
Brand:: IXYS

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Maximum Continuous Collector Current Ic	360A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	1100W
	Number of Transistors	2
	Package Type	SimBus F
	Mount Type	PCB
	Channel Type	Type N
	Pin Count	11
	Minimum Operating Temperature	150°C
	Maximum Gate Emitter Voltage VGEO	±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.8V
	Maximum Operating Temperature	-40°C
	Width	62 mm
	Series	MIXA225PF1200TSF
	Standards/Approvals	No
	Length	152mm
	Height	17mm
	Automotive Standard	No

	Select all
	Brand IXYS
	Maximum Continuous Collector Current Ic 360A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 1100W
	Number of Transistors 2
	Package Type SimBus F
	Mount Type PCB
	Channel Type Type N
	Pin Count 11
	Minimum Operating Temperature 150°C
	Maximum Gate Emitter Voltage VGEO ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.8V
	Maximum Operating Temperature -40°C
	Width 62 mm
	Series MIXA225PF1200TSF
	Standards/Approvals No
	Length 152mm
	Height 17mm
	Automotive Standard No

COO (Country of Origin):: DE

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

IXYS, Type N-Channel IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

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