IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

RS Stock No.:: 146-1730
Mfr. Part No.:: IXGP20N120B3
Brand:: IXYS

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

This image is representative of the product range

On back order for despatch 07/10/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 50)

$8.206

(exc. GST)

$9.027

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$8.206	$410.30
100 - 150	$8.001	$400.05
200 +	$7.878	$393.90
*price indicative

RS Stock No.:: 146-1730
Mfr. Part No.:: IXGP20N120B3
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, IXYS

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	180 W
Package Type	TO-220
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	20kHz
Transistor Configuration	Single
Dimensions	10.66 x 4.83 x 16mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C