Starpower DG75A08TDFQ IGBT Discrete, 100 A, 4-Pin TO-247PLUS-4L
- RS Stock No.:
- 427-754
- Mfr. Part No.:
- DG75A08TDFQ
- Brand:
- Starpower
Bulk discount available
Subtotal (1 pack of 2 units)*
$14.98
(exc. GST)
$16.48
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 30 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | $7.49 | $14.98 |
| 20 - 198 | $6.74 | $13.48 |
| 200 - 998 | $6.225 | $12.45 |
| 1000 - 1998 | $5.77 | $11.54 |
| 2000 + | $4.69 | $9.38 |
*price indicative
- RS Stock No.:
- 427-754
- Mfr. Part No.:
- DG75A08TDFQ
- Brand:
- Starpower
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT Discrete | |
| Maximum Power Dissipation Pd | 378W | |
| Package Type | TO-247PLUS-4L | |
| Pin Count | 4 | |
| Switching Speed | 30ns | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | DOSEMI | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT Discrete | ||
Maximum Power Dissipation Pd 378W | ||
Package Type TO-247PLUS-4L | ||
Pin Count 4 | ||
Switching Speed 30ns | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series DOSEMI | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower IGBT Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as solar power.
Low switching loss
Maximum junction temperature 175°C
VCE(sat) with positive temperature coefficient
Very low reverse recovery loss based on SiC diode
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