STMicroelectronics STGIB10CH60TS-XZ 3 Phase IGBT, 15 A 600 V, 26-Pin SDIP2B-26L Type X, Surface
- RS Stock No.:
- 330-467
- Mfr. Part No.:
- STGIB10CH60TS-XZ
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
$33.90
(exc. GST)
$37.29
(inc. GST)
Stock information currently inaccessible - Please check back later
- RS Stock No.:
- 330-467
- Mfr. Part No.:
- STGIB10CH60TS-XZ
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 15A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 66W | |
| Number of Transistors | 6 | |
| Package Type | SDIP2B-26L Type X | |
| Configuration | 3 Phase | |
| Mount Type | Surface | |
| Pin Count | 26 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.95V | |
| Maximum Operating Temperature | 175°C | |
| Length | 35.3mm | |
| Height | 38.5mm | |
| Standards/Approvals | UL 1557, UL 1434, File E81734 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 15A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 66W | ||
Number of Transistors 6 | ||
Package Type SDIP2B-26L Type X | ||
Configuration 3 Phase | ||
Mount Type Surface | ||
Pin Count 26 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.95V | ||
Maximum Operating Temperature 175°C | ||
Length 35.3mm | ||
Height 38.5mm | ||
Standards/Approvals UL 1557, UL 1434, File E81734 | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
The STMicroelectronics IPM 15 A, 600 V, 3-phase IGBT inverter bridge with 2 control ICs for gate driving and freewheeling diodes. It features 3.3 V, 5 V TTL/CMOS inputs with hysteresis and an internal bootstrap diode.
Undervoltage lockout of gate drivers
Smart shutdown function
Short-circuit protection
Related links
- STMicroelectronics 20 A 600 V Through Hole
- STMicroelectronics STGIB15CH60TS-X 20 A 600 V Through Hole
- STMicroelectronics SLLIMM 2nd Type N-Channel MOSFET 600 V, 26-Pin SDIP2B-26L Type Z1 STIB1560DM2-Z
- STMicroelectronics STGIB10CH60TS-L 15 A 600 V Through Hole
- STMicroelectronics STGIF7CH60TS-LZ 3 Phase IGBT 26-Pin SDIP2F-26L Type L, Surface
- STMicroelectronics 20 A 600 V Through Hole
- STMicroelectronics STGIB15CH60TS-L 20 A 600 V Through Hole
- STMicroelectronics STGIF10CH60S-L 3 Phase IGBT Module 26-Pin SDIP2F, Through Hole