STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

This image is representative of the product range

View all IGBTs

Subtotal (1 reel of 600 units)*

$2,575.80

(exc. GST)

$2,833.20

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 23 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
600 +$4.293$2,575.80

*price indicative

RS Stock No.:
285-637
Mfr. Part No.:
STGHU30M65DF2AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

84A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

441W

Number of Transistors

1

Package Type

HU3PAK

Configuration

Dual Gate

Mount Type

Surface

Pin Count

7

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Height

3.6mm

Standards/Approvals

AEC-Q101

Width

14.1 mm

Length

11.9mm

Automotive Standard

AEC-Q101

This STMicroelectronics device is an IGBT developed using an Advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

6 μs of minimum short circuit withstand time

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

Excellent switching performance thanks to the extra driving kelvin pin

Related links