Infineon IKZA40N120CS7XKSA1, N-Channel IGBT, 82 A 1.2 kV, 4-Pin PG-TO-247-4-STD-NT3.7, Through Hole
- RS Stock No.:
- 285-035
- Mfr. Part No.:
- IKZA40N120CS7XKSA1
- Brand:
- Infineon
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RS will no longer stock this product.
- RS Stock No.:
- 285-035
- Mfr. Part No.:
- IKZA40N120CS7XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 82 A | |
| Maximum Collector Emitter Voltage (Vceo) | 1.2 kV | |
| Pin Count | 4 | |
| Package Type | PG-TO-247-4-STD-NT3.7 | |
| Mount Type | Through Hole | |
| Automotive Standard | No | |
| Height | 5.1 mm | |
| Length | 21.1 mm | |
| Maximum Gate Emitter Voltage (VGEO) | ±20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 357 W | |
| Minimum Operating Temperature | 40 °C | |
| Standards/Approvals | No | |
| Width | 15.9 mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 82 A | ||
Maximum Collector Emitter Voltage (Vceo) 1.2 kV | ||
Pin Count 4 | ||
Package Type PG-TO-247-4-STD-NT3.7 | ||
Mount Type Through Hole | ||
Automotive Standard No | ||
Height 5.1 mm | ||
Length 21.1 mm | ||
Maximum Gate Emitter Voltage (VGEO) ±20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 357 W | ||
Minimum Operating Temperature 40 °C | ||
Standards/Approvals No | ||
Width 15.9 mm | ||
The Infineon IGBT features a short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology combines high reliability with exceptional performance. It is designed for challenging applications, making it suitable for both industrial drives and power supplies. With an optimised design for hard switching topologies, this component excels in efficiency and thermal management. Its co packed soft recovery diode is engineered to work seamlessly with the IGBT, ensuring minimal switching losses and enhanced overall performance. With rigorous validations conforming to JEDEC standards, it promises robust operation under demanding conditions.
Low saturation voltage enhances efficiency
Advanced dv/dt controllability improves performance
Wide operational capabilities for various applications
Validated for industrial use ensuring compliance
Innovative thermal management ensures reliability
Complete product spectrum with PSpice models for easy integration
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